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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Dispersion of electron g-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

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Author(s):
Schwan, A. [1] ; Meiners, B-M. [1] ; Henriques, A. B. [2] ; Maia, A. D. B. [2] ; Quivy, A. A. [2] ; Spatzek, S. [1] ; Varwig, S. [1] ; Yakovlev, D. R. [1] ; Bayer, M. [1]
Total Authors: 9
Affiliation:
[1] Tech Univ Dortmund, D-44221 Dortmund - Germany
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Applied Physics Letters; v. 98, n. 23 JUN 6 2011.
Web of Science Citations: 14
Abstract

The electron spin precession about an external magnetic field was studied by Faraday rotation on an inhomogeneous ensemble of singly charged, self-assembled (In,Ga)As/GaAs quantum dots. From the data the dependence of electron g-factor on optical transition energy was derived. A comparison with literature reports shows that the electron g-factors are quite similar for quantum dots with very different geometrical parameters, and their change with transition energy is almost identical. (C) 2011 American Institute of Physics. {[}doi:10.1063/1.3588413] (AU)

FAPESP's process: 09/16912-3 - Magneto-optical study of semiconductors for spintronics
Grantee:Andre Bohomoletz Henriques
Support type: Scholarships abroad - Research
FAPESP's process: 10/10452-8 - Multiple harmonic spectroscopy, spin orientation and instantaneous magnetization using light
Grantee:Andre Bohomoletz Henriques
Support type: Regular Research Grants