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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors

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Costa, Fernando J. [1] ; Trevisoli, Renan [2] ; Doria, Rodrigo T. [1]
Total Authors: 3
[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo - Brazil
[2] Univ Fed ABC, UFABC, Santo Andre, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Solid-State Electronics; v. 185, NOV 2021.
Web of Science Citations: 0

The focus of this work is to perform a first-time analysis of the thermal cross-coupling of a device on a neighbor one in advanced UTBB transistors through 3D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 mu m to 50 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device. (AU)

FAPESP's process: 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
Grantee:Marcelo Antonio Pavanello
Support Opportunities: Regular Research Grants