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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Low-temperature ZrO(2)thin films obtained by polymeric route for electronic applications

Full text
Author(s):
Boratto, Miguel H. [1] ; Lima, Joao V. M. [1, 2] ; Scalvi, Luis V. A. [1, 2] ; Graeff, Carlos F. O. [1, 2]
Total Authors: 4
Affiliation:
[1] Sao Paulo State Univ Unesp, Sch Sci, Dept Phys, BR-17033360 Bauru, SP - Brazil
[2] Sao Paulo State Univ Unesp, Sch Sci, POSMAT Postgrad Program Mat Sci & Technol, BR-17033360 Bauru, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 31, n. 18 AUG 2020.
Web of Science Citations: 0
Abstract

In this work, zirconium oxide (ZrO2) films obtained by the polymer-assisted chemical solution method were evaluated. Thin films are obtained using dip-coating with dipping rates from 1 to 100 mm/min, and annealing temperatures from 150 to 450 degrees C. The films present amorphous structure even with annealing at 450 degrees C, bandgap of 5.4 eV and a non-porous surface. The zirconia films were electrically characterized applied to a metal-insulator-metal capacitor (MIM-c) configuration. The dielectric layer presents high capacitance and impedance, highly dependent on the dipping rates and annealing temperature. The outcomes from the MIM-c investigated demonstrate that this low-temperature zirconia film may be an alternative for application in flexible electronic devices as insulating layer. More interesting results like higher capacitance and higher operation frequencies are obtained for zirconia layers obtained at 350 degrees C due to better dipole formation in the film enhanced by the thinner films and a better elimination of polymeric ligands in the film. (AU)

FAPESP's process: 18/26039-4 - Investigation of the semiconductor oxide SnO2, in the form of thin films, and combination with Cu2-xS forming multilayered heterostructures
Grantee:João Victor Morais Lima
Support Opportunities: Scholarships in Brazil - Master
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 17/20809-0 - Study of organic devices for application in bioelectronics
Grantee:Miguel Henrique Boratto
Support Opportunities: Scholarships in Brazil - Post-Doctorate