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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Direct evidence of traps controlling the carriers transport in SnO2 nanobelts

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Author(s):
Berengue, Olivia M. [1] ; Chiquito, Adenilson J. [2]
Total Authors: 2
Affiliation:
[1] Univ Estadual Paulista Unesp, Dept Fis & Quim, LCCTnano, Fac Engn Guaratingueta, Campus Guaratingueta, Sao Paulo - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, NanO LaB, CP 676, BR-13565905 Sao Paulo - Brazil
Total Affiliations: 2
Document type: Journal article
Source: JOURNAL OF SEMICONDUCTORS; v. 38, n. 12 DEC 2017.
Web of Science Citations: 0
Abstract

This work reports on direct evidence of localized states in undoped SnO2 nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimulated currents. A transition from thermal activation to hopping transport mechanisms was also observed. The energy levels found by thermally stimulated current experiments were in close agreement with transport data confirming the role of localization in determining the properties of devices. (AU)

FAPESP's process: 13/19692-0 - Quantitative study of the electronic characteristics of metal-metal oxides nanowires contacts
Grantee:Adenilson José Chiquito
Support type: Regular Research Grants
FAPESP's process: 15/21816-4 - Growth of semiconductor nanostructures based on tin and antimony oxides: study of structural and electronic transport properties
Grantee:Olivia Maria Berengue
Support type: Regular Research Grants