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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

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Trevisoli, Renan [1] ; Doria, Rodrigo Trevisoli [1] ; de Souza, Michelly [1] ; Barraud, Sylvain [2] ; Vinet, Maud [2] ; Pavanello, Marcelo Antonio [1]
Total Authors: 6
[1] Ctr Univ FEI, BR-09850901 Sao Bernardo Do Campo - Brazil
[2] Commissariat Energie Atom & Energies Alternat, Lab Elect Technol Informat, F-38054 Grenoble - France
Total Affiliations: 2
Document type: Journal article
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; v. 63, n. 2, p. 856-863, FEB 2016.
Web of Science Citations: 9

This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes shortchannel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results. (AU)

FAPESP's process: 14/18041-8 - Electrical characterization and modeling of advanced electronic devices
Grantee:Renan Trevisoli Doria
Support type: Scholarships in Brazil - Post-Doctorate