bachelor's at Electric Engineering from Centro Universitário da FEI (2007), master's at Electric Engineering from Centro Universitário da FEI (2010) and doctorate at Electric Engineering from Universidade de São Paulo (2013). Has experience in Electric Engineering, focusing on Materials and Components Semiconductors, acting on the following subjects: finfet, low temperature, series resistance, analytical model and double gate transistors. (Source: Lattes Curriculum)
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Advanced electronic devices such as Junctionless Nanowire Transistors (JNTs) have been developed aiming at a larger scaling of the devices in comparison with conventional MOSFETs, due to the better electrostatic control of the channel charges, minimizing the short-channel effects occurrence. Therefore, JNTs provide a better miniaturization of electronic devices.Aiming at the analysis of t…
Double-gate transistors constitutes one of the most promising structures for solving the problems caused by the continuous downscaling of dimensions, thanks to the improvements on the performance of deep-submicrometer MOSFETs, with channel length shorter than 100 nm. More recently, using the concept of double-gate transistors, multiple-gate structures have been proposed, thanks to the exc…
| 1 / 1 | Completed research grants |
| 3 / 3 | Completed scholarships in Brazil |
| 4 / 4 | All research grants and scholarships |
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