CV Lattes
Universidade Estadual de Campinas (UNICAMP). Centro de Componentes Semicondutores (CCS) (Institutional affiliation for the last research proposal) Birthplace: Brazil
graduation at Engenharia de Materiais from Universidade de Caxias do Sul (2010), master's at Electric Engineering from Universidade Federal de Santa Catarina (2013) and doctorate at Electric Engineering from Universidade Estadual de Campinas (2019). Has experience in Electric Engineering, acting on the following subjects: encapsulamento eletrônico and flip chip. (Source: Lattes Curriculum)
| News published in Agência FAPESP Newsletter about the researcher |
| TITULO |
| Articles published in other media outlets (0 total): |
| More itemsLess items |
| VEICULO: TITULO (DATA) |
| VEICULO: TITULO (DATA) |
Semiconductors compounds of type III-V, such as gallium arsenide (GaAs) and indium phosphide (InP) are potentially used in electronic and optoelectronic circuits of high speed, because these semiconductors have several advantages, as high electron mobility (greater than 5,400 cm2 / V · s), high saturation velocity and energy bands with direct transition when compared with the semiconducto…
| 1 / 1 | Completed scholarships in Brazil |
| Associated processes | |