CV Lattes
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Fundação Educacional Inaciana Padre Sabóia de Medeiros (FEI). Centro Universitário da FEI (UNIFEI). Campus de São Bernardo do Campo (Institutional affiliation from the last research proposal) Birthplace: Brazil
bachelor's at Electric Engineering from Centro Universitário da FEI (1993), master's at Electric Engineering from Universidade de São Paulo (1996) and doctorate at Electric Engineering from Universidade de São Paulo (2000). Has experience in Electric Engineering, focusing on Materials and Components Semiconductors, acting on the following subjects: soi mosfet, gc soi mosfet, analog applications, low temperature and electrical characterization. (Source: Lattes Curriculum)
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The semiconductor industry owes much of its success to the ability of continually downscale the devices (basically transistors) that make the integrated circuits (chips). This decrease in the size of the devices allows an increase in the number of transistors integrated in a single chip. It also allows the reduction of the dissipated power, larger memories and integration of new functiona…
(Only some records are available in English at this moment)
The semiconductor industry owes much of its success to the ability to continually shrink the size of the devices (basically transistors) that make up integrated circuits (chips). This decrease in the size of the devices allows an increase in the number of transistors integrated on a single chip. It also makes it possible to reduce the power consumed, manufacture larger memories and integr…
Multiple gate MOS transistors are a promising alternative to solve the problems arising from the continued reduction of the device dimensions, due to the improvements in the performance of MOS devices with extremely submicron dimensions (deep-submicrometer), with channel lengths smaller than 14 nm, because of the excellent control of channel charges.The double or triple gate transistors, …
The scaling of electronic devices has brought difficulties on using planar MOS transistors in extremely sub micrometric technologies due to the presence of short channel effects. Multiple gate MOS transistors increase significantly the gate control over the charges in the channel, reducing the occurrence of these effects. This is why these devices have shown to be of great interest for fu…
(Only some records are available in English at this moment)
This project aims to sustain an international cooperation between the research group coordinated by Prof. Dr. Marcelo Antonio Pavanello, from Department of Electrical Engineering of Centro Universitário da FEI, situated in São Bernardo do Campo, Brazil, and the research group coordinated by Dr. Gilles Reimbold and Dr. Mikaël Cassé, from the Laboratoire d'électronique et de technologie de …
This project aims to sustain an international cooperation between the research group coordinated by Prof. Dr. Marcelo Antonio Pavanello, from Department of Electrical Engineering of Centro Universitário da FEI, situated in São Bernardo do Campo, Brazil, and the research group coordinated by Dr. Olivier Faynot, from the Laboratoire d'électronique et de technologie de l'information (Leti), …
| 1 / 1 | Ongoing research grants |
| 22 / 20 | Completed research grants |
| 16 / 12 | Completed scholarships in Brazil |
| 2 / 2 | Completed scholarships abroad |
| 41 / 35 | All research grants and scholarships |
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