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Structure and electrical properties of domains in ferroelectrics and multiferroic materials

Grant number: 23/06088-9
Support Opportunities:Scholarships in Brazil - Post-Doctoral
Effective date (Start): October 01, 2023
Effective date (End): August 31, 2024
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal Investigator:José Antonio Eiras
Grantee:Yalambaku Rajesh
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
Associated research grant:17/13769-1 - Multiferroic and ferroelectric materials for energy converters: synthesis, properties, phenomenology and applications, AP.TEM


This postdoctoral project aims to investigate new multiferroic and ferroelectric materials in order to estimate their potential applications in optoelectronic devices. Through a systematic study of domain structures, which govern physical properties associated with topological surfaces, such as electrical conductivity in domain walls, we intend to contribute to expanding the knowledge that currently exists on this topic. The possibility of manipulation of the polarization orientation and electrical conductivity in the walls of ferroelectric domains, on a nanometric scale, using the technique of conductive atomic force microscopy (c-AFM), forms the basis of this research proposal. The study of electrical conductivity in domain walls in topological structures aims to allow the creation of new functional materials at the nanometric scale, which can be applied in several fields, such as the development of optoelectronic devices, memories, energy converters and spintronics. For the development of this project, films of "lead-free" ferroelectric materials will be produced, based on (K0,5Na0,5)NbO3, Bi4Ti3O12 and BiFeO3 (with different structures), by deposition through RF Sputtering. The choice of these materials will also make it possible to carry out comparative studies between multiferroic and ferroelectric materials, on the nature of topological defects and their influence on the electrical response of these materials.

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