Controlling the luminescence in transition metal dichalcogenides

Abstract

This direct doctoral project fits within the area of two-dimensional luminescent materials and aims to contribute to relevant problems in the area, including in particular the local luminescence excited by the injection of charge carriers and the luminescence of single photon sources such as point defects. Indeed, two-dimensional luminescent semiconductors have attracted enormous attention due to the potential for innovative devices, in particular light emitters and/or absorbers. This is due to the strong light-matter interaction in these materials, including, in particular, transition metals dichalcogenides such as molybdenum disulfide (MoS2). Due to the high electron-hole binding energy typical of these systems, they are good light emitters even at room temperature and have been used in several prototypes aiming to supplant existing technologies. We will prepare samples based on mechanical exfoliation and characterize them through various techniques including in particular scanning tunneling microscopy associated with a light injection and collection system. With the experimental results, we will better understand how the monolayer doping affects the quantum efficiency of light emission by carrier injection via STM. In addition, we shall deepen the understanding of single photon emitters in these materials. This knowledge shall contribute to the understanding of these materials and their potential application in real-world devices. (AU)