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Coupling of the oxide semiconductor SnO2 as thin film with quinoline derivatives for optoelectronic applications

Grant number: 22/08483-0
Support Opportunities:Scholarships in Brazil - Master
Effective date (Start): December 01, 2022
Effective date (End): February 29, 2024
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal Investigator:Luis Vicente de Andrade Scalvi
Grantee:Lucas Prado Fonseca
Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil


The present proposal deals with the deposition of layers of tin dioxide (SnO2) and layers of quinoline derivatives (DQ), in the form of thin films, creating simple transparent devices, based on the SnO2/DQ heterojunction. The SnO2 will be deposited by sol-gel-dip-coating which leads to a material of high transparency and reasonable electrical properties. Thus, interesting luminescent and transport characteristics of quinoline will be combined with the transparency of the SnO2 matrix. In addition to the characteristics of transparency and luminescence, we have the possible generation of high conductivity in the quinoline layer, and/or in the interface, leading to a structure of very high mobility, which can provide the construction of field effect transistors (FET) of high velocity. Another perspective is a p-n junction formation since SnO2 is naturally n-type and quinoline has acceptor (p-type) characteristics. Alternatively, the addition of an intermediate layer of polystyrene (PS) nanoparticles is also proposed. The student has already been working in this line of research for the last four years, in Scientific Initiation projects, so that he is completely able to develop the present project.

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