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Deposition of transparent heterostructures of ZrO2 associated with oxide semiconductor SnO2, with potential use in optoelectronic devices

Grant number: 21/04144-3
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): September 01, 2021
Effective date (End): February 28, 2022
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal researcher:Luis Vicente de Andrade Scalvi
Grantee:Lucas Prado Fonseca
Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

The present proposal deals with the deposition of layers of zirconium oxide (ZrO2), oxide with insulating characteristics, via sol-gel (chemical process). In addition to the investigation of these layers, it is also proposed to combine with SnO2 layers creating a simple transparent device, based on the SnO2/ZrO2 heterojunctions. The main idea of the project is the use of these oxides for the conduction channel (SnO2) and electrical insulation functions in a transparent field-effect transistor (FET), which will be built in a simple way, with potential application in optoelectronics. Although it is not a priority in this project, it is important to mention that the combination of these oxides has also led to the optimization of devices for gas sensing. Alternatively, it is also proposed to add an intermediate layer of polystyrene (PS) nanoparticles. The student has been working in this line of research for the past two years, so that the 8 months of scholarship requested in this project are enough to achieve good results, this time until reaches his graduation. (AU)

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