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Single-photon emission from point defects and substrate-induced hot spots in two-dimensional semiconductors: a scanning tunnelling microscopy-induced luminescence study

Grant number: 20/12480-0
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): March 29, 2021
Effective date (End): August 30, 2021
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Luiz Fernando Zagonel
Grantee:Ricardo Javier Peña Román
Supervisor abroad: Eric Le Moal
Home Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
Research place: Institut des Sciences Moléculaires d’Orsay (ISMO), France  
Associated to the scholarship:18/08543-7 - Light emission by individual defects in 2D materials, BP.DR

Abstract

In this project, we will experimentally investigate the role of defects in the luminescence properties of two-dimensional (2D) semiconductors that are of paramount importance for future optoelectronics, i.e., monolayer transition metal dichalcogenides (TMDs). We will carry out such investigations on the nanometer scale using a combination of scanning tunnelling microscopy (STM) and optical spectroscopy and microscopy. We will consider both point defects in the 2D semiconductor, i.e., atomic vacancies or substitutional atoms, and more "mesoscopic" highly luminescent areas, or hot spots, engineered through local interactions with underlying plasmonic nanostructures (i.e., mechanical strain, Purcell effect, electronic doping, etc.). The goals of the project are to gain fundamental understanding on how to tailor the TMDs in order to obtain single-photon nanosources that have enhanced quantum yield (i.e., low losses) and improved electro-luminescence efficiency (i.e., high electron-to-photon conversion rate). (AU)

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