Conductivity study of copper nanowires for millimeter wave transmission line applications

Abstract

The high flow of information and global data transfer has resulted in greater attention to telecommunications, especially in the high-frequency range (above 20 GHz). In pursuit of higher performance and cheaper operations, especially in millimeter wave (mmW) commercial applications, companies in the industry focus their efforts on developing new technologies. Therefore, given the evolution of active circuits in complementary metal-oxide semiconductors (CMOS), an opportunity arises for the development of high-performance integrated mmW systems that, to enable low-cost production, require the use of heterogeneous technologies for each component of the system, therefore, it is necessary to use an interconnection between them, called interposer. In this context, the project consists of determining the characteristics of the growth process of copper nanowires that optimize the electrical conductivity of the interposers developed by the Microelectronics Laboratory (LME). In addition to a detailed study of the parameters that influence the uniform growth of copper in the nanopores, a conductivity of the nanowires will be correlated with the properties of slow-wave transmission lines operating between 30 GHz to 110 GHz. The stages of this project will consist in the manufacture of membrane masks for the electrodeposition copper nanowires, analysis of the quality and uniformity of this growth and determination of the parameters that optimize the conductivity of the nanowires for comparison with previous results.