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New approaches toward the application of complex oxide thin films in correlated electron random access memories

Grant number: 19/07413-5
Support type:Scholarships abroad - Research
Effective date (Start): February 19, 2020
Effective date (End): February 18, 2021
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal researcher:Alexandre Zirpoli Simões
Grantee:Alexandre Zirpoli Simões
Host: Carlos Alberto Paz de Araujo
Home Institution: Faculdade de Engenharia (FEG). Universidade Estadual Paulista (UNESP). Campus de Guaratinguetá. Guaratinguetá , SP, Brazil
Research place: University of Colorado, Colorado Springs (UCCS), United States  
Associated research grant:13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID


Technologies in electronic devices, magnetic and energy converters are reaching limits to their performance considering the current materials. To overcome this problem, the electrical and magnetic aspects of the ABO3 perovskite structure in the interface of ultrathin films has been gaining importance. These heterostructures have demonstrated multifunctional properties never observed before such as the increase of conductive, ferroelectric and ferromagnetic effects. No literature is reported on the preparation of heterostructured films of materials with perovskite structure from organic citrate solution, such as LaTiO3 and its contribution to generate distortion in the lattice and electronic structure of YTiO3. Such distortion induces ferromagnetism and superconductivity due to the degeneracy effect of t2g orbitals. In this way, our research focus abroad is to obtain heterostructured thin films based on two materials with different electrical/magnetical properties that can sustain a high-density two dimensional electron gas (2DEG) aiming for applications such as correlated electron random access memories (CeRAM). The theorical simulations will predict how the electronic effects of the YTiO3/LaTiO3 and LaTiO3/YTiO3 interfaces lead to ferromagnetism/ferroelectricity and superconductivity compatible for use in quantum memories and devices with high magnetoresistance. This project will contribute to the prospective characterization of new properties in the nanoelectronics for devices thinner than 65 nm. The CeRAM memory development has the possibility to replace transistors for thicknesses in the range of 2 to 5 nm. With current transistor technology becoming non-viable below 8 nm, a new switching mechanism may provide the basis for a new era in electronics. For this, heterostructured thin films will be deposited in suitable substrates controlling the chemical homogeneity, the microstructure and the film-electrode interaction.

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