BE SOI MOSFET transistors optimization for biosensor platform application

Abstract

This research project proposes, in an unprecedented way, the fabrication and electrical characterization of an optimized version of the BE SOI MOSFET ("Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor") for biosensor application. Nowadays this type of application is becoming very important to enable better life quality to the population. Many diseases that affect the Brazilian population could be inferred in situ and in real time, and even biological threatens could be prevented. This work is based on the transistor called BE SOI MOSFET that was fabricated with entirely national technology in Laboratorio de Sistemas Integraveis (LSI) at University of Sao Paulo. Among its most notable characteristics is worth to mention the simplicity of fabrication, without impurity doping and with only three photolithography steps and the ability to work as an nMOS and a pMOS varying only the substrate polarization. The performance and physical principles of this device optimized for biosensors applications will be evaluated through the electrical characterization of the fabricated transistors (using or not biological means) and simulations based on them. It is planned an exchange program in an international research institute in order to improve the knowledge in the area. The first test of the BE SOI MOSFET as a biosensor will be performed using a glucose based material (a well known biological element) to facilitate the initial evaluation of the performance of this transistor. Other biological materials could be analyzed, depending on the sensibility of this device and the expertise obtained during the exchange period. (AU)