Study and electrical characterization of FinFET transistors for space application

Abstract

With the advancement of MOSFET technology, the control of the charges in the channel region becomes increasingly difficult and complex. The multi-gates SOI MOSFETs (Silicon-On-Insulator), also known as FinFET transistors, appear as an alternative to planar ones because of their better electrostatic coupling between gate and channel, which results in higher immunity to short-channel effects. One of the important applications of advanced integrated circuits is their use in equipment and circuits submitted to a radiation environment for medical and aerospace applications. In this project will be carried out the theoretical and experimental study of the FinFETs transistors submitted to radiation. (AU)