Comparative study of the self-heating effect on FinFET and SOI UTBB transistors

Abstract

This research project is a contribution to the technological development of micro and nanoelectronics in Brazil, as it intends to implement a system for measuring self-heating in advanced transistors in our country. Due to the reduction of devices dimensions and the use of new materials with low thermal conductivity, self-heating affects the performances of advanced transistors. Devices under self-heating effects result in an increase of the device temperature, which causes mobility reduction, compromised reliability and signal delays, influencing the performance of analog circuits, and affecting the efficiency of digital circuits. The methodology for the development of this work will consist of three main parts. Firstly will be held the study and implantation of a system for the extraction and measurement of self-heating parameters, thus far not available in Brazil. Additionally, a comparative analysis will be conducted through experimental measurements with multi-gate transistors (also known as FinFET or 3D transistors), and SOI (Silicon-On-Insulator) transistors with extremely thin buried oxide, called SOI UTBB (Ultra-Thin Buried Oxide and Body). Those are the most advanced technologies currently employed in the fabrication of Integrated Circuits by the global semiconductors industry. Finally, two-dimensional (2D) and three-dimensional (3D) simulations will complement this analysis of the results, in order to support the modeling of the self-heating effect in those devices.