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Floating body and coupling effects in ultrathin body and buried oxide FDSOI MOSFETs

Grant number: 14/13664-7
Support Opportunities:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): November 19, 2014
Effective date (End): July 16, 2015
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:João Antonio Martino
Grantee:Katia Regina Akemi Sasaki
Supervisor: Sorin Cristoloveanu
Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Research place: Micro and Nanotechnology Innovation Campus (MINATEC), France  
Associated to the scholarship:13/13690-5 - Study of SOI MOSFETs transistors with ultra-thin silicon film body and buried oxide at high temperatures, BP.DR


In order to overcome the current limits for the devices' scaling, UTBB SOI MOSFET (Ultra-Thin-Body-and-Buried-oxide Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor) technology combined with the dynamic threshold voltage technique has been studied as a possible solution to reduce short channel effects and further improve the performance of these transistors. This is due to the stronger back gate coupling associated with the advantage of obtaining a higher ON state current and a lower OFF state current.These devices have also been studied for memory applications, where the floating body is one of the most important mechanisms for their working.Thus, this work supervised by Prof. Sorin Cristoloveanu aims to study the influence of the floating body and coupling effects on UTBB SOI MOSFET in advanced devices provided by MINATEC/France. It will be studied the main electrical parameters (digital and analog), from experimental data with some numerical simulations, in order to better understand the influence of the floating body and the coupling in advanced UTBB SOI MOSFET. (AU)

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