Developing and characterization of metal-SnO2 nanowires interfaces

Abstract

This proposal aims to the production and characterization of electronic devices based on nanowires/nanobelts grown from metal oxides such as SnO2. This particular material is an excellent candidate for the developing of various electronic devices, from light sensors to transistors. Here the investigation of the electronic properties of nanostructures and devices based on them is proposed by studying the dependence of the current conduction processes using different metals to define the electrical contacts, resulting in different metal-semiconductor interfaces. In this work, the candidate activities were focused on learning basic techniques for the production of samples and devices and on studying their properties such as the analysis and interpretation of the electronic properties displayed by the devices.