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Study of Technological Parameters for Power MOSFET.

Grant number: 13/20332-8
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): November 01, 2013
Effective date (End): October 31, 2014
Field of knowledge:Engineering - Electrical Engineering - Industrial Electronics, Electronic Systems and Controls
Principal researcher:Milene Galeti
Grantee:Fernando Orue Dainese
Home Institution: Campus de São Bernardo do Campo. Centro Universitário da FEI (UNIFEI). Fundação Educacional Inaciana Padre Sabóia de Medeiros (FEI). São Bernardo do Campo , SP, Brazil


The semiconductor devices used in high power systems must resist high voltages and currents, as well as high reverse voltages during its switching. Even with the improvement in the manufacturing processes of power devices not yet achieved satisfactory solutions that enable the expansion of your applications in terms of reverse voltage blocking capability, current flow and low dissipation for high frequency switching. The purpose of this work is to verify through numerical simulations the influence of some technological parameters in the performance of power MOSFET transistors, considering the static and the dynamic behavior. Finally, the results obtained in this study will be compared with the results previously reported in the literature.

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