The semiconductor devices used in high power systems must resist high voltages and currents, as well as high reverse voltages during its switching. Even with the improvement in the manufacturing processes of power devices not yet achieved satisfactory solutions that enable the expansion of your applications in terms of reverse voltage blocking capability, current flow and low dissipation for high frequency switching. The purpose of this work is to verify through numerical simulations the influence of some technological parameters in the performance of power MOSFET transistors, considering the static and the dynamic behavior. Finally, the results obtained in this study will be compared with the results previously reported in the literature.
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