Electric double layer transistors based on crystalline ionic conductors

Abstract

Explore the changing in the electronic structure in interfaces between ferromagnetic and ferroelectric materials has been recently used as a strategy to obtain structures with strong-coupled ferroic orders. As example, the coupling between ferroic orders at thin films interfaces can influence the transport of charge and spin in such materials, offering versatile possibilities to generation of new nanoelectronic devices. Obtaining devices with such multiferroic order is the main goal of the post-doc project to which this internship is linked (Fapesp project 2012/18397-1). Growing epitaxial thin films of complex oxides is a complex task and this internship intent to reach the technical support to do this in the Group of Physics of Complex Materials (GFMC) from the University Complutense of Madrid (UCM Spain) with a double goal:(i) The candidate will learn with the work environment and experience accumulated in GFMC while (ii) develop a work involving the growth of complex oxides heterostructures. Besides that, this internship will strengthen the collaboration between the GFMC group and the Brazilian Synchrotron Light Laboratory adding a common research subject in which both laboratories work cooperatively with direct participation of the candidate. (AU)