GaN based films and heteroestructures grown by reactive sputtering for SAW devices application

Abstract

This project aims to produce GaN, InGaN and AlGaN films and their respective multilayer heterostructures by reactive sputtering technique with application purpose in devices/sensors based on surface acoustic wave (SAW). The goal is to obtain ordered nanostructures with high crystallized and textured layers, along with well-defined interfaces and smooth surfaces. We aim to obtain a deep understanding and a great control over the growth of these materials, and promote advances in knowledge and technology of thin films and GaN based heterostructures grown by reactive sputtering technique. For that, proper monitoring of the growth process, as well as characterizations of the obtained samples will compose the optimization routine. The optimized films and heterostructures will be applied in SAW devices and the results will serve as feedback for the optimization routine. It is important to emphasize the unprecedented application of GaN and its related alloys/heterostructures grown by sputtering in SAW devices that arouses great scientific and technological interest. And, given the current interest in this class of materials and the technological and industrial power of sputtering technique, the direct and indirect results will lead to publications in high circulation indexed journals and potential patent records. Additionally, the development of this project will implement a new research line at ITA, opening up a new range of research themes, dissertations and doctoral theses. (AU)