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Novel approaches towards artificial multiferroics


The increasing demand for electro-electronic devices, with high performance and multi-functional and the rapid advances of the nanotechnology require the development of new methods and techniques for the production and characterization of nanostructure materials and phenomenological models to describe/to predict some of its properties. The demand for multifunctionality requires, at least, new materials, that can integrate ferroelectric and magnetic properties of high technological interest. Inside of this context, multiferroics material can be considered suitable to integrate two or more physical properties of high technological interest. It can also provides new challenges in the processes of synthesis of new materials, and development of new devices with controlling and simulation of its physical properties and modeling. The literature brings no work related to the preparation and characterization of materials with perovskite structure, such as LaFeO3 and its contribution in develop stress in the crystal structure of the BiFeO3 inducing ferroelectricity due the local displacement of B ions. Thus, the main objective of this research is to study the formation of artificial heterostructures formed by two materials with antiferromagnetic properties. Based in Hartree-Fock simulations it is possible to determine how the stress formed at the interface will lead to a ferroelectric response as well as to evaluate how the domains orientation affects the multiferroic properties for application in memories of multiple states. For this, thin films of BiFeO3 and LaFeO3 will be deposited in adequate substrates controlling it chemical homogeneity, the microstructure and the interaction film-electrode. (AU)

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