Design, fabrication and characterization of FinFET transistors

Abstract

The goal of this project is the design, fabrication and electrical characterization of multiple gate transistors with vertical channel built on silicon-on-insulator substrate, known as FinFET. These devices are the most promising structures for the next technological generation on CMOS integrated circuits fabrication. To achieve this objective, it is being proposed a thematic network formed by Escola Politécnica da USP (São Paulo), Centro de Componentes Semicondutores (CCS) UNICAMP (Campinas) and Centro Universitário da FEI (São Bernardo do Campo). The steps of design and fabrication will be performed by USP and UNICAMP, while in the electrical characterization FEI will also take care together with them. The devices modeling will be developed by FEI. The new FinFET´s to be designed and fabricated in Brazil (USP/UNICAMP) in this project will be based in the preliminary version developed in NAMITEC project (CNPq - Instituto do Milênio - process n. 420031/2005-7). During the electrical characterization, FinFET´s fabricated at USP/UNICAMP will be used as well as the devices fabricated at IMEC (Interuniversity Microelectronics Center, Leuven, Bélgica). Through the results obtained experimentally as well as three-dimensional simulation, the main electrical parameters from FinFET´s will be analyzed in digital and analogical circuits applications, such as threshold voltage, subthreshold slope, transconductance, transconductance over drain current ratio, Early voltage and intrinsic gain voltage. These parameters will be studied not only at room temperature, but also in the 80K to 730K ranges, for aerospace applications. The success of this work will allow Brazil to enter in the world of nanotechnology, fundamental step to the technological evolution. (AU)