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Semiconductor heterostructures


The objective of this project is to develop fundamental and cutting edge technology in the area of new semiconductor materials, in particular the heterostructures of semiconductor. We are seeking to converge the experimental and theoretical work, working closely linked to the groups of growing semiconductors, in Unicamp and beyond. The objectives of our work can be summarized as follows: to train highly qualified personnel technically, both experimentally and theoretically; development of technological training, aiming to follow and participate in the study and proposal of new semiconductor materials and devices; investigation of new physical effects in semiconductors, in particular the study of the physics of low dimensionality (n ≶ 3); support for other experimental and growing groups. The team is organized in a regime of cooperation, with the laboratories being open to all. The use of these is planned by the users through a monthly diary. The studies seek to tackle the heterostructures of semiconductors which today represent greatest interest whether from the scientific point of view or for the potential for applications. Our strategy consists of using samples grown nationally and using international collaborations to have access to more sophisticated structures that are still not available in Brazil. Finally, in the case of most recent systems, where there are no samples available, we try to proceed with theoretic studies. The team has the following laboratories: Luminescence Laboratory; Photoluminescence Excitation Laboratory; Photoreflectance Laboratory; High Pressure Raman Laboratory; Magneto-Optic and Transport Laboratory. The studies we wish to undertake are as follows: study of the interfaces of the type (AIo.48In0.52As)y(Ga0.47In0.53As)1-y/lnP e InxGa1-xASyP1-y/lnP and of the discontinuity of the bands in these materials and in InGaAs/GaAs interfaces (person in charge: Paulo Motisuke); study of the interfaces formed by the growth of few monolayers (1-7) in lnP matrix (person in charge: Maria J.S.P. Brazil); effect of many bodies in InGaAs/GaAs/GaAIAs (person in charge: Fernando Likawa); Fano resonances in tunneling with coupling ?-X (person in charge: Peter A.B. Schulz); Fano resonances between excitonic states (person in charge: José A. Brum); optical transitions and spectroscopy of tunneling in delta-doping structures and heterostructures with modulated doping (person in charge: Paulo Motisuke); study of planar doping in quantum wells and in super-networks ?-doping (person in charge: Eliermes Menezes); analysis of the dimensionality of the emitter of a diode of resonant tunneling (person in charge: Peter A. B. Schulz); formation of domains in structures with doping ? multiples (person in charge: Eliermes A. Menezes); excitonic transitions in heterostructures II/VI (person in charge: Maria J.F. Brazil); substrates with different orientations of (100) (person in charge: Vólia L. Crivelenti); miniband dispersion and effects of electrical field (person in charge: Fernando Cerdeira); multi-channel tunneling and Wannier-Stark effect in super-networks of quantum boxes (person in charge: José A. Brum); Si/Ge super-networks in substrates of Ge (person in charge: Fernando Cerdeira); study of the luminescent properties of layers of Porous Silicon (person in charge: Ayrton A. Bernussi). (AU)

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