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Polaritons, excitons and trions in van der Waals heterostructures

Grant number: 22/08086-0
Support Opportunities:Regular Research Grants
Duration: November 01, 2022 - October 31, 2024
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:André Jorge Carvalho Chaves
Grantee:André Jorge Carvalho Chaves
Host Institution: Divisão de Ciências Fundamentais (IEF). Instituto Tecnológico de Aeronáutica (ITA). Ministério da Defesa (Brasil). São José dos Campos , SP, Brazil
Associated researchers: Diego Rabelo da Costa ; Teldo Anderson da Silva Pereira

Abstract

Two-dimensional materials have attracted enormous attention from the scientific community due to their set of unique properties and enormous possibility of technological applications. These materials can be combined in heterostructures with the adjacent layers weakly bonded by van der Waals interactions, presenting different physical properties than their isolated versions (monolayer). These materials have two interesting characteristics that will be the object of study of this project: i) their charge carriers have strong interaction with light and; ii) presence of strongly few-body bound states(excitons and trions in particular), due to the smaller electrostatic screening resulting from the reduced dimensionality. In this project we will deal with the propagation of plasmon-, phonon- and exciton-polaritons in two-dimensional isotropic and anisotropic materials; bound states of excitons and trions in van der Waals heterostructures; and quantum emitters coupled to two-dimensional materials. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
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VEICULO: TITULO (DATA)
VEICULO: TITULO (DATA)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
MOHSENI, K.; HADIZADEH, M. R.; FREDERICO, T.; DA COSTA, D. R.; CHAVES, A. J.. Trion clustering structure and binding energy in two-dimensional semiconductor materials: Faddeev equations approach. PHYSICAL REVIEW B, v. 107, n. 16, p. 15-pg., . (19/07767-1, 22/08086-0)

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