Advanced search
Start date
Betweenand
Related content

2D devices for optoeletronics

Grant number: 19/23488-5
Support Opportunities:Regular Research Grants
Duration: February 01, 2021 - January 31, 2023
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Yara Galvão Gobato
Grantee:Yara Galvão Gobato
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
Associated researchers:Ingrid David Barcelos
Associated grant(s):22/00419-0 - Van der Waals Heterostructures for Spintronics, AP.R SPRINT

Abstract

Here, we propose to investigate optical properties of van der Waals heterostructures based on monolayers of transition metal dichalcogenides materials. We will investigate the effect of voltage on excitonic effects of type II heteroestructure, hybridization of direct and indirect excitons, magnetic proximity effects, excitonic effects in anisotropic 2D materials, etc. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
More itemsLess items
Articles published in other media outlets ( ):
More itemsLess items
VEICULO: TITULO (DATA)
VEICULO: TITULO (DATA)

Scientific publications (11)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
GOBATO, Y. GALVAO; DE BRITO, C. SERATI; CHAVES, A.; PROSNIKOV, M. A.; WOZNIAK, T.; GUO, SHI; BARCELOS, INGRID D.; V. MILOSEVIC, M.; WITHERS, F.; CHRISTIANEN, P. C. M.. Distinctive g-Factor of Moire-Confined Excitons in van der Waals Heterostructures. Nano Letters, v. 22, n. 21, p. 6-pg., . (18/01808-5, 14/07375-2, 19/14017-9, 15/13771-0, 19/23488-5)
TONG, CAPUCINE; BIDAUD, THOMAS; KOIVUSALO, EERO; PITON, MARCELO RIZZO; GUINA, MIRCEA; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; CATTONI, ANDREA; HAKKARAINEN, TEEMU; COLLIN, STEPHANE. athodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowire. Nanotechnology, v. 33, n. 18, . (14/50513-7, 19/23488-5, 19/07442-5)
ALHASSAN, SULTAN; DE SOUZA, DANIELE; ALHASSNI, AMRA; ALMUNYIF, AMJAD; ALOTAIBI, SAUD; ALMALKI, ABDULAZIZ; ALHUWAYZ, MARYAM; KAZAKOV, IGOR P.; KLEKOVKIN, V, ALEXEY; TSEKHOSH, I, VLADIMIR; et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1-xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, . (19/07442-5, 19/23488-5)
AL HUWAYZ, M.; GALETI, H. V. A.; LEMINE, O. M.; IBNAOUF, K. H.; ALKAOUD, A.; ALASKAR, Y.; SALHI, A.; ALHASSAN, S.; ALOTAIBI, S.; ALMALKI, A.; et al. Optical properties of self-assembled InAs quantum dots based P-I-N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy. Journal of Luminescence, v. 251, p. 6-pg., . (19/23488-5)
TRENCH, ALINE B.; ALVAREZ, ROMAN; TEODORO, VINICIUS; DA TRINDADE, LETICIA G.; MACHADO, THALES R.; TEIXEIRA, MAYARA M.; DE SOUZA, DANIELE; PINATTI, IVO M.; SIMOES, ALEXANDRE Z.; GOBATO, YARA GALVAO; et al. Interface matters: Design of an efficient alpha-Ag2WO4/Ag3PO4 photocatalyst. Materials Chemistry and Physics, v. 280, p. 12-pg., . (19/25944-8, 19/23488-5, 19/23488-5, 19/03722-3, 13/07296-2)
COVRE, F. S.; FARIA, P. E., JR.; GORDO, V. O.; DE BRITO, C. SERATI; ZHUMAGULOV, Y., V; TEODORO, M. D.; COUTO, O. D. D., JR.; MISOGUTI, L.; PRATAVIEIRA, S.; ANDRADE, M. B.; et al. Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2. NANOSCALE, v. 14, n. 15, p. 11-pg., . (14/19142-2, 18/01808-5, 19/23488-5, 13/18719-1, 09/54035-4, 12/11382-9)
PRANDO, GABRIELA AUGUSTA; SEVERIJNEN, MARION E.; BARCELOS, INGRID D.; ZEITLER, ULI; CHRISTIANEN, PETER C. M.; WITHERS, FREDDIE; GOBATO, YARA GALVAO. Revealing Excitonic Complexes in Monolayer WS2 on Talc Dielectric. PHYSICAL REVIEW APPLIED, v. 16, n. 6, . (19/23488-5, 18/01808-5, 18/00823-0)
NUTTING, DARREN; PRANDO, GABRIELA A.; SEVERIJNEN, MARION; BARCELOS, INGRID D.; GUO, SHI; CHRISTIANEN, PETER C. M.; ZEITLER, ULI; GOBATO, YARA GALVAO; WITHERS, FREDDIE. Electrical and optical properties of transition metal dichalcogenides on talc dielectrics. NANOSCALE, v. 13, n. 37, . (19/23488-5, 18/00823-0, 18/01808-5)
DE BRITO, CAIQUE SERATI; RABAHI, CESAR RICARDO; TEODORO, MARCIO DALDIN; FRANCO, DOUGLAS F.; NALIN, MARCELO; BARCELOS, INGRID D.; GOBATO, YARA GALVAO. Strain engineering of quantum confinement in WSe2 on nano-roughness glass substrates. Applied Physics Letters, v. 121, n. 7, p. 7-pg., . (19/23488-5, 16/16900-9, 19/14017-9, 18/19272-4, 13/07793-6)
ALGHAMDI, HAIFA; ALHASSNI, AMRA; ALHASSAN, SULTAN; ALMUNYIF, AMJAD; KLEKOVKIN, ALEXEY, V; TRUNKIN, IGOR N.; VASILIEV, ALEXANDER L.; GALETI, HELDER V. A.; GOBATO, YARA GALVAO; KAZAKOV, IGOR P.; et al. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates. Journal of Alloys and Compounds, v. 905, p. 14-pg., . (19/23488-5, 19/07442-5)
MACHADO, EDUARDO G.; MARCHEZI, PAULO E.; THEREZIO, ERALCI M.; GERMINO, JOSE CARLOS; SZOSTAK, RODRIGO; DE BRITO, CAIQUE S.; GOBATO, YARA G.; PEREIRA, ERNESTO C.; TONEY, MICHAEL F.; NAGAO, RAPHAEL; et al. Light-induced halide segregation in perovskites with wrinkled morphology. JOURNAL OF ENERGY CHEMISTRY, v. 71, p. 6-pg., . (17/11986-5, 13/07296-2, 17/00089-2, 19/23488-5, 14/50249-8, 16/01817-9, 17/12582-5)

Please report errors in scientific publications list using this form.
X

Report errors in this page


Error details: